Optical properties of InGaN Quantum Dots

This study provides a novel technique in MOVPE for growing nanometer scale InGaN QDs. Growth interruption method had been introduced into epitaxial processes of InGaN layers, and we successfully formed InGaN SAQDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2×10 cm. Micro-Raman measurement reveals that samples with the nanoscale InGaN QD structures of high strain shows a strong biaxial compressive stress in InGaN layer. Furthermore, the introduction of growth interruption would result in a PL blueshift as large as 72 meV at 17K.